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NETCHANGE(5)		      IRSIM User's Manual		  NETCHANGE(5)

NAME
       netchange - format of netchange files read by irsim.

DESCRIPTION
       A  netchange  file  consists of a series of lines, each of which begins
       with a key letter.  The key letter beginning a line determines how  the
       remainder  of  the  line is interpreted.	 The following are the list of
       key letters understood.

       | any text
	      Lines beginning with a vertical bar are treated as comments  and
	      ignored by the program.

       add type gate source drain length width [area]
	      Add  a  new  transistor of type to the network.  Currently, type
	      may be:
		     n	 n-channel enhancement transistor.
		     p	 p-channel enhancement transistor.
		     d	 depletion transistor (for NMOS).

	      The names of the nodes to which the gate, source, and  drain  of
	      the  transistor  are  connected  are  given by gate, source, and
	      drain respectively.  The length and width of the transistor  are
	      given  by length and width respectively.	The area parameter, if
	      given, will use that number as the area for calculating the gate
	      capacitance.   Length and width should be given in lambda units,
	      area should be in lambda^2 units, these will internally be  mul‐
	      tiplied by the LAMBDA factor from the configuration (.prm) file.

       delete type gate source drain length width [area]
	      Delete  an existing transistor from the net.  All the parameters
	      have the same meaning as for the add command.

       move type gate source drain length width [area] g s d
	      Move an existing transistor to a new location  the  net.	 type,
	      gate, source, drain, length, width, and area have the same mean‐
	      ing as for the add command.  g, s, and d are the names of	 nodes
	      to  which	 the gate, source and drain should be connected.  If a
	      particular terminal(s) is not to be re-connected, the  name  can
	      be  specified  using  an	"*".  Any or all of g, s, and d may be
	      "*".  For example, to move the gate of an	 n-channel  transistor
	      from node old to new the following command would be used:

		 m n old src_node drn_node 4 2.2 new * *

	      Note that the drain and source terminals, and the g and s termi‐
	      nals are interchangeable; the simulator will know if  these  are
	      swapped.	So the last example could also have been written:

		 m n old drn_node src_node 4 2.2 new * *

       capacitance node value
	      Change the capacitance of a node by value picofarads.  Value may
	      be negative, thereby decreasing the node's capacitance.  Node is
	      the node name.

       N node metal-area poly-area diff-area diff-perimeter
	      Change  the  capacitance	of  node  using the area and perimeter
	      information of the metal,	 polysilicon,  and  diffusion  layers.
	      All  the	parameters should be in lambda (or lambda^2 for areas)
	      units, they will internally  be  converted  to  the  appropriate
	      capacitance  as  defined	in the configuration file.  The values
	      can be negative to decrease the capacitance.

       M node M2A M2P MA MP PA PP DA DP PDA PDP
	      Change the capacitance of node, using the following  geometrical
	      information:

		     M2A   area of 2nd-level metal
		     M2P   perimeter of 2nd-level metal
		     MA	   area of 1st-level metal
		     MP	   perimeter of 1st-level metal
		     PA	   area of polysilicon
		     PP	   perimeter of polysilicon
		     DA	   area of n-diffusion
		     DP	   perimeter of n-diffusion
		     PDA   area of p-diffusion
		     PDP   perimeter of p-diffusion

	      All  perimeter  values  should  be  in lambda units, area values
	      should be in lambda^2 units.  The perimeter measures are half of
	      the  actual  total  perimeter  (i.e.,  they  are	the sum of the
	      lengths of the top and one side).	 Again, the values may be neg‐
	      ative to decrease the capacitance of the node.

       threshold node low high
	      Change  the  threhsold voltages of node.	Low and high should be
	      in normalized voltage units (i.e. floating-point numbers in  the
	      range 0.0 to 1.0).

       Delay node tplh tphl
	      Change  the  delays  for node to be tplh nanoseconds for low-to-
	      high transistions, and tphl ns.  for  high-to-low	 transistions.
	      These  should  be absolute numbers, not relative increments/der‐
	      crements.

       NOTE: For all commands, only the first letter is significant, the  rest
	     of	 the  string  will  be	ignored.  They are only shown here for
	     clarity.

BUGS
       This is an experimental interface for the incremental simulator and  is
       very likely to change in the future.

SEE ALSO
       irsim(5) sim(5) presim(1)

3rd Berkeley Distribution					  NETCHANGE(5)
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